KURISHIMA Kenji | NTT Photonics Laboratories, NTT Corporation

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概要

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著作論文

A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
DC Characteristics of InP HBTs under High-Temperature and Bias Stress
High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications(MWP Devices)(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
InP-based High-speed Transistors and Their IC Applications
Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity

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