High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)

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概要

• 論文の詳細を見る

• A wideband, low-power preamplifier and a high-speed, low-power monolithically integrated regenerative receiver are designed and fabricated using small-scale InP/InGaAs DHBTs. The preamplifier has a gain-bandwidth product of 192 GHz with a power dissipation of 51 mW. The regenerative receiver is successfully operated at 20 Gbit/s with a power dissipation of 0.6 W and an input dynamic range of 13 dB. This IC offers the lowest energy ever reported for regenerative receivers. In addition, a 20-Gbit/s optical modulator driver with a driving voltage of 2 V is successfully fabricated. These results demonstrate the feasibility of InP/InGaAs DHBTs for high-speed, low-power lightwave communication ICs.

• 社団法人電子情報通信学会の論文
• 1999-11-25

著者

• Sano Eiichi

  Ntt Network Innovation Laboratories

• Yamahata Shoji

  Ntt Photonics Laboratories

• Sano E

  Ntt Network Innovation Lab. Yokosuka‐shi Jpn

• KURISHIMA Kenji

  NTT Photonics Laboratories, NTT Corporation

• NAKAJIMA Hiroki

  NTT Photonics Laboratories

• Nakajima H

  Ntt Photonics Laboratories

• Yamaguchi S

  Faculty Of Agriculture University Of Ehime

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

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