Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-12-15

著者

• Yamahata Shoji

  Ntt Photonics Laboratories

• Shigekawa Naoteru

  NTT Photonics Laboratories

• ITO Hiroshi

  NTT LSI Laboratories

• Ito Hiroki

  Development Department Mitsubishi Electric Corporation

• Ito H

  Department Of Energy And Environmental Science Graduate School Of Utsunomiya University

• YAMAHATA Shoji

  NTT LSI Laboratories

• SHIGEKAWA Naoteru

  NTT LSI Laboratories

• KURISHIMA Kenji

  NTT LSI Laboratories

• Shigekawa Naoteru

  Ntt Science & Core Technology Laboratory

• Shigekawa Naoteru

  Institute For Solid State Physics The University Of Tokyo:electro-communication Laboratory Ntt K.k.

• Yamaguchi S

  Faculty Of Agriculture University Of Ehime

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

関連論文

• P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
• Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
• Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
• Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
• Generation of Sub-picosecond GeV Electron Bunches by Laser Acceleration in Vacuum
• Reflection-Induced Light Correlation in Spontaneous Emission in Front of a Mirror
• Laser Emission from Dye-Doped Small Spheres by Ultraviolet N_2 Laser Pumping
• Rotary Ultrasonic Motor Using Symmetric Contour Vibration of Rectangular Plate
• Ultrasonic Flat Motor Using Coupling of Longitudinal and Flexural Vibration Modes
• Resonant Frequency Deviation of Ultrasonic Flat Motor Caused by Rotor Pressure : Ultrasonic Motor, Actuator and Transducer
• Rotary Ultrasonic Flat Motor : High Power Ultrasonics
• Reversible Ultrasonic Flat Motor Drived by Single Phase Driver : P: PIEZOELECTRICS
• A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
• DC Characteristics of InP HBTs under High-Temperature and Bias Stress
• High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
• Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
• Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications(MWP Devices)(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
• Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
• Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
• Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
• Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
• Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
• Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
• Slicing and Adding of Short Microwave Pulse by Laser Produced Plasma : Nuclear Science, Plasmas, and Electric Discharges
• IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
• High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
• Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
• Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
• A Monte Carlo Supercell Approach for the Effects of Disorder on the Upper-Valley Electronic Properties in InGaAs Ternary Alloys
• Alkylation and Acylation of the 1,2,3-Triazole Ring
• Enlerged Frequency Upshift from DC to AC Radiation Converter using Boundary Effect of Plasma-filled Waveguide
• Proton Acceleration in Transverse Laser Wake Fields
• Further Frequency Upshift in DC to AC Radiation Converter by Perpendicular DC Magnetic Field
• Emission of Short Microwave Pulse Radiated by Interaction between Periodic Static Electric Field and Relativistic Ionization Front
• Electronic NO_2 Sensor Using Merocyanine-Doped Langmuir Blodgett Films
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
• Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation : Ion Beam Process
• Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation
• Selenium Thin-Film Solar Cell
• Selenium Thin Film Transistor
• Selenium Thin Film Solar Cell : I-3: NEW STRUCTURE AND ADVANCED MATERIAL (1)
• InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
• InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
• Expanded-Bed Protein Refolding Using a Solid-Phase Artificial Chaperone
• Monitoring of the Refolding Process for Immobilized Firefly Luciferase with a Biosensor Based on Surface Plasmon Resonance
• Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
• Breathing Monitor Using Dye-Doped Optical Fiber
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
• Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
• Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
• Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
• Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
• Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
• Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
• Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
• Studies of Constrained Dynamics of the Phase Transition in the Artificial Bilayer Membrane of Dialkyl Ammonium Amphiphile by Quasielastic Neutron Scattering
• Second- and Third-Harmonic Generation of Nd:Glass Laser in Fast Red ITR Organic Crystal Fiber : Waves, Optics and Quantum Electronics
• Electro-Optic Intensity Modulator Using a Novel Urethane-Urea Copolymer
• InP-based High-speed Transistors and Their IC Applications
• Electroluminescence from am Inlays-Based High Electron Mobility Transistor Designed for High-Speed Operation
• Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In_xGaAs Layers : Semiconductors and Semiconductor Devices
• Influeruce of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quarntum-Well Lasers
• Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates
• The Korean Tea Plant (Camellia sinensis) : RFLP Analysis of Genetic Diversity and Relationship to Japanese Tea
• High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
• Fiber Humidity Sensor Using Fluorescent Dye-Doped Plastics
• Surface Recombination Velocity in p-Type GaAs
• High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
• Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
• 0.25-μm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure
• Gas Source MBE Growth of GaSb
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
• Synthesis of (.+-.)-8-Deisopropyladunctin B
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
• A low-power wideband InP-HBT 27-1 PRBS generator
• Sn Incorporation in GaAs by Molecular Beam Epitaxy
• Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
• Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
• Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors

もっと見る 閉じる

スポンサーリンク