YAMAHATA Shoji | NTT LSI Laboratories
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概要
関連著者
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YAMAHATA Shoji
NTT LSI Laboratories
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Yamahata Shoji
Ntt Photonics Laboratories
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Yamaguchi S
Faculty Of Agriculture University Of Ehime
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KURISHIMA Kenji
NTT LSI Laboratories
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Matsuoka Yutaka
NTT LSI Laboratories
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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Matsuoka Y
Ntt Lsi Lab. Atsugi‐shi Jpn
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Matsuoka Yasunobu
Central Research Laboratory Hitachi Ltd.
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ITO Hiroshi
NTT LSI Laboratories
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NAKAJIMA Hiroki
NTT Photonics Laboratories
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Nakajima H
Ntt Photonics Laboratories
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SHIGEKAWA Naoteru
NTT LSI Laboratories
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Kobayashi Takashi
NTT LSI Laboratories
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Kobayashi Tetsuro
The Faculty Of Engineering Science Osaka University
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Kobayashi T
Osaka Univ. Toyonaka‐shi Jpn
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Kobayashi T
Faculty Of Engineering Science Osaka University
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Yamahata S
Ntt Photonics Lab. Atsugi‐shi Jpn
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Shigekawa Naoteru
NTT Photonics Laboratories
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ISHIBASHI Tadao
NTT LSI Laboratories
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Ito Hiroki
Development Department Mitsubishi Electric Corporation
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Yamamoto M
Ntt Electronics Technology Corporation
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Ito H
Department Of Energy And Environmental Science Graduate School Of Utsunomiya University
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Nakajima Hiroki
NTT Wireless Systems Laboratories
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Shigekawa Naoteru
Ntt Science & Core Technology Laboratory
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Shigekawa Naoteru
Institute For Solid State Physics The University Of Tokyo:electro-communication Laboratory Ntt K.k.
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Ishibashi T
Ntt Photonics Laboratories
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Murata K
Ntt Photonics Laboratories
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Sano E
Ntt Network Innovation Lab. Yokosuka‐shi Jpn
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MATSUOKA Yutaka
NTT Opto-electronics Laboratories
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Nakajima Hiroki
NTT LSI Laboratories
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Sano Eiichi
NTT LSI Laboratories
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Yamaguchi Satoshi
NTT LSI Laboratories
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Murata Koichi
NTT LSI Laboratories
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Murata K
Ntt Photonics Laboratories Ntt Corporation
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Yamahata Shoji
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
著作論文
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
- Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
- Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition