Shigekawa Naoteru | NTT Photonics Laboratories

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概要

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著作論文

P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Studies of Constrained Dynamics of the Phase Transition in the Artificial Bilayer Membrane of Dialkyl Ammonium Amphiphile by Quasielastic Neutron Scattering

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