Shigekawa Naoteru | Ntt Photonic Lab. Kanagawa Jpn

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概要

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著作論文

P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures
Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors

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