Shigekawa Naoteru | Ntt Photonic Lab. Kanagawa Jpn
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概要
関連著者
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Shigekawa Naoteru
NTT Photonics Laboratories
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Shiojima Kenji
Ntt Photonics Laboratories
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Nishimura Kazumi
NTT Photonics Laboratories
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
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Suemitsu Tetsuya
Ntt Photonics Laboratories
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Makimura Takashi
NTT Photonics Laboratories
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Nishimura Kazumi
NTT Photonic Laboratories, 3-3-18 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Hohkawa Kohji
Kanagawa Institute of Technology
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
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Kobayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
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黄 啓新
神工大工学部
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宝川 幸司
神工大工学部
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宝川 幸司
神奈川工科大学工学部
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Koh Keishin
Kanagawa Institute of Technology
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Kanashiro Chinami
Kanagawa Institute of Technology
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WATANABE Noriyuki
NTT Photonics Laboratories
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Koh Keishin
Kanagawa Institute Of Technolgy
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Hohkawa Kohji
Department Of Electronic & Electrical Engineering Kanagawa Institute Of Technology
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Ida Minoru
Ntt Photonics Laboratories Ntt Corporation
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Kaneshiro Chinami
Kanagawa Institute Of Technology
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Shigekawa Naoteru
Ntt Photonics Laboratories Ntt Corporation
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Shigekawa Naoteru
Ntt Science & Core Technology Laboratory
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Shigekawa Naoteru
Institute For Solid State Physics The University Of Tokyo:electro-communication Laboratory Ntt K.k.
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Ono Toshiro
Ntt Microsystem Integration Laboratories
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Kaneshiro C
Kanagawa Institute Of Technology
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塩島 憲治
Showa Pharmaceutical University
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Komine Kenji
Advanced Technology Research Laboratory Meidensha Corporation
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Shimada Masaru
Ntt Microsystem Integration Laboratories
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Enoki Takatomo
Ntt Photonics Laboratories
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Muramoto Yoshifumi
Ntt Photonics Laboratories
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SUGITANI Suehiro
NTT Photonics Laboratories
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Sugitani Suehiro
Ntt Photonics Laboratories Ntt Corporation
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Suemitsu T
Ntt Photonics Lab. Kanagawa Jpn
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MAKIMURA Takashi
NTT Photonics Laboratories, NTT Corporation
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Makimura Takashi
Ntt Basic Research Laboratories Ntt Corporation
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Makimura Takashi
Ntt Photonics Laboratories Ntt Corporation
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Kodama Satoshi
Ntt Photonics Laboratories
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Yamamoto Akio
Graduate School Of Energy Science Kyoto University
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Ishibashi Tadao
NTT Photonic Laboratories, NTT Corpration
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Suemitsu Tetsuya
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Ida Minoru
NTT Photonics Laboratories, Atsugi, Kanagawa 243-0198, Japan
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Hoshi Takuya
NTT Photonics Laboratories, Atsugi, Kanagawa 243-0198, Japan
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Narihiko Maeda
NTT Photonics Laboratories, NTT Corporation, 3-1, Morinosato Wakamiya, Atsugi 243-0198, Japan
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Shiojima Kenji
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Koh Keishin
Faculty of Engineering, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, Kanagawa 243-0292, Japan
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Hohkawa Kohji
Faculty of Engineering, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, Kanagawa 243-0292, Japan
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Hohkawa Kohji
Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi-shi, Kanagawa 243-0292, Japan
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Yamamoto Akio
Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan
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Sugita Ken-ichi
Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan
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Masanobu Hiroki
NTT Photonics Laboratories, NTT Corporation, 3-1, Morinosato Wakamiya, Atsugi 243-0198, Japan
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Watanabe Noriyuki
NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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Nada Masahiro
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Ishibashi Tadao
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Kodama Satoshi
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Nishimura Kazumi
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Suemitsu Tetsuya
NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Makimura Takashi
NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan
著作論文
- P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
- Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
- Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
- Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
- DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
- Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
- Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
- Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors