Shimada Masaru | Ntt Microsystem Integration Laboratories
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概要
関連著者
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Shimada Masaru
Ntt Microsystem Integration Laboratories
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Saito Kunio
Ntt Microsystem Integration Laboratories
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JIN Yoshito
NTT Microsystem Integration Laboratories
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Ono Toshiro
Ntt Microsystem Integration Laboratories
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Nakata Shunji
NTT Microsystem Integration Laboratories
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SAKAI Hideaki
NTT Microsystem Integration Laboratories
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Nakata Shunji
Ntt Microsystem Integration Laboratories Ntt Corporation
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Jin Y
Ntt Microsystem Integration Laboratories
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Enoki Takatomo
Ntt Photonics Laboratories
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Shimada Masaru
Ntt Microsystem Integration Laboratories Ntt Corporation
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SAITO Kunio
NTT AFTY Corporation
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Akazawa Housei
NTT Microsystem Integration Laboratories, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Akazawa Housei
Ntt Microsystem Integration Lab. Kanagawa Jpn
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Akazawa Housei
Ntt Microsystem Integration Laboratories
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Ono Toshiro
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Nakata Shunji
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Jin Yoshito
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Jin Yoshito
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Shimada Masaru
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Sakai Hideaki
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
著作論文
- Reversible Resistive Switching in Bi_4Ti_3O_ Thin Films Deposited by Electron Cyclotron Resonance Sputtering
- Metal-Oxide-Semiconductor-Diode Characteristics with SiO_2 Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
- Non-volatile Al_2O_3 memory using an Al-rich structure as a charge storage layer
- Birefringence and Optical Waveguiding Losses in Preferentially $c$-Axis Oriented LiNbO3 Thin Films on SiO2 Produced by Electron Cyclotron Resonance Plasma Sputtering
- Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
- Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Reversible Resistive Switching in Bi4Ti3O12 Thin Films Deposited by Electron Cyclotron Resonance Sputtering