Reversible Resistive Switching in Bi_4Ti_3O_<12> Thin Films Deposited by Electron Cyclotron Resonance Sputtering

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Shimada Masaru

  Ntt Microsystem Integration Laboratories

• JIN Yoshito

  NTT Microsystem Integration Laboratories

• SAKAI Hideaki

  NTT Microsystem Integration Laboratories

関連論文

• Reversible Resistive Switching in Bi_4Ti_3O_ Thin Films Deposited by Electron Cyclotron Resonance Sputtering
• Metal-Oxide-Semiconductor-Diode Characteristics with SiO_2 Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
• Non-volatile Al_2O_3 memory using an Al-rich structure as a charge storage layer
• Birefringence and Optical Waveguiding Losses in Preferentially $c$-Axis Oriented LiNbO3 Thin Films on SiO2 Produced by Electron Cyclotron Resonance Plasma Sputtering
• Selective Removal of Dry-Etching Residue Derived from Polymer Sacrificial Layer for Microelectromechanical-System Device Fabrication
• Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
• Synchronized Multiple-Array Vibrational Device for Microelectromechanical System Electrostatic Energy Harvester
• Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer
• Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
• Characterization of Metal Insulator Metal Electrical Properties of Electron Cyclotron Resonance Plasma Deposited Ta2O5
• Reversible Resistive Switching in Bi4Ti3O12 Thin Films Deposited by Electron Cyclotron Resonance Sputtering

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