Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
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概要
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Oxidation using electron cyclotron resonance (ECR) plasma stream provides a large silicon dioxide growth rate at the initial growth stage (${>}6$ nm/min), a very small activation energy of 0.02 eV for oxidation, and a high-quality interface with interface trap density of $3\times 10^{10}$ cm-2$\cdot$eV-1. The plasma stream was extracted by a divergent magnetic field from the ECR region and irradiated on a single-crystalline silicon substrate with ion energies of 10–30 eV. The high-quality interface was obtained by oxidation without substrate heating and only postoxidation annealing at 400°C in hydrogen ambient.
- 2004-06-15
著者
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Ono Toshiro
Ntt Microsystem Integration Laboratories
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Shimada Masaru
Ntt Microsystem Integration Laboratories
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JIN Yoshito
NTT Microsystem Integration Laboratories
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Ono Toshiro
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Jin Yoshito
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Shimada Masaru
NTT Microsystem Integration Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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