Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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Shi Yi
Institute Of Industrial Science University Of Tokyo:department Of Physics Nanjing University
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SAITO Keisuke
Application Laboratory
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Shi Yi
Institute Of Biophysics Academia Sinica
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ISHIKURO Hiroki
Institute of Industrial Science, University of Tokyo
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SAITO Kenichi
Institute of Industrial Science, University of Tokyo
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Ishikuro H
Univ. Tokyo Tokyo Jpn
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Ishikuro Hiroki
Institute Of Industrial Science University Of Tokyo
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Saito K
Akita Univ. Akita Jpn
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Saito Keisuke
Application Laboratory Bruker Axs
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