Hiramoto Toshiro | Institute Of Industrial Science The University Of Tokyo

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関連著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Hiramoto Toshiro

  Institute Of Industrial Science University Of Tokyo

• Hiramoto Toshiro

  The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi

• Hiramoto Toshiro

  Vlsi Design And Education Center The University Of Tokyo

• Hiramoto T

  Univ. Tokyo

• Hiramoto Toshiro

  The Institute Of Industrial Science The University Of Tokyo:vlsi Design And Education Center The Uni

• 平本 俊郎

  東京大学生産技術研究所

• Hiramoto Toshiro

  Vlsi Design And Education Center University Of Tokyo

• 平本 俊郎

  東京大学生産技術研究所:mirai-selete

• Hiramoto Toshiro

  Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers

• Hiramoto Toshiro

  Inst. Of Industrial Science And Cinqie University Of Tokyo

• Hiramoto Toshirou

  Device Development Center Hitachi Ltd.

• Saitoh Masumi

  Institute Of Industrial Science University Of Tokyo

• Ishikuro Hiroki

  Institute Of Industrial Science University Of Tokyo

• 平本 俊郎

  東大

• 西田 彰男

  (株)半導体先端技術テクノロジーズ

• 竹内 潔

  MIRAI-Selete

• 西田 彰男

  MIRAI-Selete

• 竹内 潔

  NECエレクトロニクス株式会社LSI基礎開発研究所

• 水谷 朋子

  東京大学生産技術研究所

• 更屋 拓哉

  東京大学生産技術研究所

• ISHIKURO Hiroki

  Institute of Industrial Science, University of Tokyo

• SARAYA Takuya

  Institute of Industrial Science, University of Tokyo

• Ishikuro H

  Univ. Tokyo Tokyo Jpn

• 蒲原 史朗

  MIRAI-Selete

• 最上 徹

  Necシリコンシステム研究所

• 最上 徹

  日本電気(株) マイクロエレクトロニクス研究所

• KUMAR Anil

  東京大学生産技術研究所

• 最上 徹

  MIRAI-Selete

• Takamiya Makoto

  Institute Of Industrial Science The University Of Tokyo

• TAKAMIYA Makoto

  Institute of Industrial Science, University of Tokyo

• 稲葉 聡

  東芝セミコンダクター社半導体研究開発センター

• 稲葉 聡

  MIRAI-Selete

• SAITOH Masumi

  Institute of Industrial Science, University of Tokyo

• SARAYA Takuya

  The Institute of Industrial Science, The University of Tokyo

• Takamiya Makoto

  Institute Of Industrial Science University Of Tokyo

• Saraya Takuya

  The Institute Of Industrial Science The University Of Tokyo

• Inukai Takashi

  Institute Of Industrial Science The University Of Tokyo

• Miyaji Kousuke

  Institute Of Industrial Science University Of Tokyo

• 寺田 和夫

  広島市大学院情報科学研究科

• Duyet Tran

  Institute Of Industrial Science University Of Tokyo

• Shi Yi

  Institute Of Biophysics Academia Sinica

• INUKAI Takashi

  Institute of Industrial Science, University of Tokyo

• Tsutsui Gen

  Institute Of Industrial Science University Of Tokyo

• Shi Yi

  Institute Of Industrial Science University Of Tokyo:department Of Physics Nanjing University

• NAGUMO Toshiharu

  Institute of Industrial Science, University of Tokyo

• 杉井 信之

  (株)日立製作所中央研究所

• 岩松 俊明

  (株)ルネサステクノロジ先端デバイス開発部

• 尾田 秀一

  (株)ルネサステクノロジ先端デバイス開発部

• SAITO Keisuke

  Application Laboratory

• Saito Keisuke

  Application Laboratory Analytical Division Philips Japan Ltd.

• Saito K

  Institute Of Industrial Science University Of Tokyo

• Putra Arifin

  Institute Of Industrial Science University Of Tokyo

• Kamohara Shiro

  Mirai-selete

• SAITO Kenichi

  Institute of Industrial Science, University of Tokyo

• SAITOH Masumi

  Toshiba Corporation

• MIYAJI Kousuke

  Institute of Industrial Science, University of Tokyo

• INUKAI Takashi

  The Institute of Industrial Science, The University of Tokyo

• TAKAHASHI Nobuyoshi

  Institute of Industrial Science, University of Tokyo

• Saito Kenichi

  Institute Of Industrial Science University Of Tokyo

• Inukai T

  The Institute Of Industrial Science The University Of Tokyo

• Saito Kunio

  Ntt Microsystem Integration Laboratories

• Ohtou Tetsu

  Institute Of Industrial Science The University Of Tokyo

• Ikoma T

  Univ. Tokyo Tokyo Jpn

• 角村 貴昭

  (株)半導体先端技術テクノロジーズ

• 角村 貴昭

  MIRAI-Selete

• 清水 健

  天理よろず相談所病院小児科

• 清水 健

  埼玉大学大学院理工学研究科

• 鈴木 誠

  東京大学生産技術研究所

• 清水 健

  東京大学生産技術研究所

• Majima Hideaki

  Institute Of Industrial Science University Of Tokyo

• Hiramoto Toshiro

  Univ. Tokyo Tokyo Jpn

• 清水 健

  埼玉社会保険病院病理

• IKOMA Toshiaki

  Texas Instruments Tsukuba R&D Center

• YASUDA Yuri

  Institute of Industrial Science, University of Tokyo

• 清水 健

  北海道大学大学院工学研究科

• KOBAYASHI Masaharu

  Institute of Industrial Science, University of Tokyo

• KOURA Hiroshi

  Institute of Industrial Science, the University of Tokyo

• Yasuda Yuri

  Institute Of Industrial Science University Of Tokyo:chuo University

• 清水 健

  千葉大学大学院医学研究院病原分子制御学

• Koura Hiroshi

  Institute Of Industrial Science The University Of Tokyo

• 寺田 和夫

  広島市立大学大学院情報科学研究科

• 山口 泰男

  三菱電機(株)ulsi技術開発センター

• 山口 泰男

  株式会社ルネサステクノロジ

• 山口 泰男

  三菱電機(株)ulsi開発研究所

• 陳 杰智

  東京大学生産技術研究所

• Im Hyunsik

  Institute Of Industrial Science

• Im Hyunsik

  Institute Of Industrial Science The University Of Tokyo

• Yasuda Yukio

  School Of Electrical Engineering And Electronics Toyohashi University Of Technology

• NISHIDA Akio

  MIRAI-Selete

• HASHIGUCHI Gen

  Institute of Industrial Science, University of Tokyo

• Fujii T

  Institute Of Industrial Science University Of Tokyo

• FUJII Tomoyuki

  Institute of Industrial Science, University of Tokyo

• IKOMA Toshiaki

  Institute of Industrial Science, University of Tokyo

• TSUTSUI Gen

  Institute of Industrial Science, University of Tokyo

• HASHIGUCHI Gen

  Faculty of Engineering, Kagawa University

• 鄭 然周

  東京大学生産技術研究所

• Chen Jiezhi

  東京大学生産技術研究所

• OHTOU Tetsu

  Institute of Industrial Science, The University of Tokyo

• SAITO Toshiki

  Institute of Industrial Science, University of Tokyo

• Sakurai Takayasu

  Institute Of Industrial Science & Center For Collaborative Research The University Of Tokyo

• Yasuda Y

  Univ. Tokyo Tokyo Jpn

• Sugii Nobuyuki

  Central Research Laboratory Hitachi Ltd.

• Fujii T

  Tohoku Univ. Sendai Jpn

• Saitoh Masumi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Tsuchiya Ryuta

  Central Research Laboratory Hitachi Ltd.

• Hashiguchi G

  Faculty Of Engineering Kagawa University

• TACHIBANA Fumihiko

  Institute of Industrial Science, University of Tokyo

• 小野 崇人

  東北大学

• 高村 禅

  北陸先端科学技術大学院大学マテリアルサイエンス研究科

• 新宮原 正三

  関西大学大学院工学研究科

• 小田 俊理

  東工大量子ナノエレ研セ

• 平本 俊郎

  MIRAI-Selete

• 高村 禅

  北陸先端大院・マテリアルサイエンス

• 高村 禅

  北陸先端科学技術大学院大学

• 浦岡 行治

  奈良先端大

• 羽根 一博

  東北大学

• 一木 隆範

  東大院・工・バイオエンジニアリング

• SAKURAI Takayasu

  Institute of Industrial Science, The University of Tokyo

• 小田 俊理

  東工大工

• 小田 俊理

  東工大量子ナノ研:sorst-jst

• 小田 俊理

  東京工業大学量子ナノエレクトロニクス研究センター

• ODA Shunri

  Research Center for Quantum Effect Electronics, Tokyo Institute of Technology

• 高橋 庸夫

  北海道大学大学院情報科学研究科

• 松井 真二

  兵庫県立大高度研

• 森 伸也

  阪大院工

• 森 伸也

  阪大工

• 辰巳 哲也

  ソニー(株)半導体事業本部セミコンダクターテクノロジー開発部門

• 辰巳 哲也

  技術研究組合 超先端電子技術開発機構 プラズマ技術研究室

• 鳥海 明

  東大

• 金田 千穂子

  富士通研

• 小田中 紳二

  阪大

• 宮崎 誠一

  広大院先端研

• 金田 千穂子

  富士通研究所

• 石田 誠

  豊橋技科大

• 井谷 俊郎

  Selete

• 上野 和良

  芝浦工大

• 坂本 邦博

  産総研

• 芝原 健太郎

  広大

• 須田 良幸

  農工大

• 高橋 庸夫

  北大

• 久本 大

  日立

• 廣瀬 和之

  宇宙研

• 水野 文二

  UJTラボ

• 須田 良幸

  農工大・工

• 一木 隆範

  東洋大学・工

• 新宮原 正三

  関西大

• 井谷 俊郎

  日本電気ULSIデバイス開発研究所

• 鳥海 明

  東大・物工

• 鳥海 明

  東大院工

• 辰巳 哲也

  ソニー

• 高村 禅

  北陸先端大

• 森 伸也

  阪大

• 小野 崇人

  東北大学大学院工学研究科

• SAITOH Masumi

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation

• 小田 俊理

  東工大

• 高橋 庸夫

  東北大・工

• 高橋 庸夫

  北海道大学 大学院情報科学研究科

• Im Hyunsik

  Department Of Semiconductor Science Dongguk University

• Hane Kazuhiro

  Department Of Mechatronics & Precision Engineering Tohoku University

• Hane Kazuhiro

  Faculty Of Engineering Tohoku University

• Majima Hideaki

  The Institute Of Industrial Science The University Of Tokyo

• 井谷 俊郎

  Nec

• 宮崎 誠一

  広大

• 松井 真二

  兵庫県立大

• 高橋 庸夫

  日本確信電話(株)ntt物性科学基礎研究所

• Oda S

  Tokyo Inst. Technology Tokyo Jpn

• Oda S

  Tokyo Inst. Technol. Tokyo Jpn

• Oda Shunri

  Quantum Nanoelectronics Research Center Tokyo Institute Of Technology

• Oda Shunri

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Oda Shunri

  The Graduate School At Nagatsuta Tokyo Institute Of Technology

• TAMSIR Arifin

  Institute of Industrial Science, University of Tokyo

• JANUAR Doni

  Institute of Industrial Science, University of Tokyo

• YOKOYAMA Kouki

  Institute of Industrial Science, The University of Tokyo

• MOCHIZUKI Yasunori

  Institute of Industrial Science, University of Tokyo

• WANG Haining

  Institute of Industrial Science, University of Tokyo

• NAGATA Eiji

  Institute of Industrial Science, University of Tokyo

• YANAGIDAIRA Kosuke

  Institute of Industrial Science, University of Tokyo

• GOMYO Hiroyuki

  Institute of Industrial Science, the University of Tokyo

• KAWAGUCHI Hiroshi

  Institute of Industrial Science, the University of Tokyo

• 一木 隆範

  東大

• 一木 隆範

  東京大学大学院工学系研究科バイオエンジニアリング専攻

• Ipposhi Takashi

  Renesas Technology Corp.

• 高橋 庸夫

  北海道大学情報科学研究科

• Mochizuki Yasunori

  Institute Of Industrial Science University Of Tokyo

• Mochizuki Yasuhiro

  Hitachi Research Laboratory Hitachi Ltd.

• 小野 崇人

  東北大

• 羽根 一博

  東北大学大学院

• 小田 俊理

  東京工業大学総合理工学研究科

• Majima H

  The Institute Of Industrial Science The University Of Tokyo

• Januar Doni

  Institute Of Industrial Science University Of Tokyo

• Nagata Eiji

  Institute Of Industrial Science University Of Tokyo:chuo University

• Terada Kazuo

  Faculty Of Information Sciences Hiroshima City University

• Saitoh Masumi

  The Authors Are With Institute Of Industrial Science The University Of Tokyo

• Gomyo Hiroyuki

  Institute Of Industrial Science The University Of Tokyo

• Yokoyama Kouki

  Institute Of Industrial Science The University Of Tokyo

• SHIMIZU Ken

  Inst. of Industrial Science and CINQIE, University of Tokyo

• PARK Sangsu

  Institute of Industrial Science, University of Tokyo

• IM Hyunsik

  Univ. of Dongguk, Dept. of Semiconductor Science

• KIM Ilgweon

  Institute of Industrial Science, University of Tokyo

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著作論文

• 微細MOSデバイスにおけるランダムばらつき(プロセス・デバイス・回路シミュレーション及び一般)
• 1.MOSトランジスタのスケーリングに伴う特性ばらつき(CMOSデバイスの微細化に伴う特性ばらつきの増大とその対策)
• シリコン技術
• (110)SOI基板上に作製したGAAシリコンナノワイヤの移動度評価(低電圧/低消費電力技術、新デバイス・回路とその応用)
• 「電流立上り電圧」ばらつきに起因する微細MOSトランジスタのランダム電流ばらつきの解析(低電圧/低消費電力技術,新デバイス・回路とその応用)
• DMA TEGによるSRAMのスタティックノイズマージンの直接測定と解析(低電圧/低消費電力技術,新デバイス・回路とその応用)
• 「電流立上り電圧」ばらつきに起因する微細MOSトランジスタのランダム電流ばらつきの解析(デバイス,低電圧/低消費電力技術,新デバイス・回路とその応用)
• DMA TEGによるSRAMのスタティックノイズマージンの直接測定と解析(高信頼技術,低電圧/低消費電力技術,新デバイス・回路とその応用)
• C-11-1 微細MOSトランジスタの特性ばらつきの研究(C-11.シリコン材料・デバイス,一般セッション)
• Untitled - Foreword
• Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
• Si(110)面正孔移動度における方向依存性の起源 : 極薄SOIを用いた実験的考察(IEDM特集(先端CMOSデバイス・プロセス技術))
• Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor ( Quantum Dot Structures)
• Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
• Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
• Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement
• Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
• Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
• High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
• (110)SOI基板上に作製したGAAシリコンナノワイヤの移動度評価(低電圧/低消費電力技術、新デバイス・回路とその応用)
• シリコンナノワイヤpMOSFET及び室温動作単正孔トランジスタにおける一軸歪みの効果(機能ナノデバイス及び関連技術)
• シリコンナノワイヤpMOSFET及び室温動作単正孔トランジスタにおける一軸歪みの効果(機能ナノデバイス及び関連技術)
• Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations(Device,Low-Power, High-Speed LSIs and Related Technologies)
• Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs
• Future Electron Devices and SOI Technology : Semi-Planar SOI MOSFETs with Sufficient Body Effect
• Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
• Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs
• Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
• Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect Transistor Memories with Silicon Nanocrystal Floating Gates
• Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories
• Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
• Optimum Condutions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
• Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
• Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
• High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
• Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
• Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
• Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
• Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
• Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
• Extremely Large Amplitude of Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
• Re-Examination of Impact of Intrinsic Dopant Fluctuations on Static RAM (SRAM) Static Noise Margin
• Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)
• Origin of Critical Substrate Bias in Variable Threshold Voltage CMOS
• Special Issue on Advanced Sub-0.1 μm CMOS Devices
• Mobility Degradation in (110)-Oriented Ultra-thin Body Double-Gate pMOSFETs with SOI Thickness of less than 5nm
• Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]-Directed Channels at Room Temperature
• Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor
• Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect
• Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dot
• Re-examination of Impact of Intrinsic Dopant Fluctuations on SRAM Static Noise Margin
• Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
• Suppression of Stand-by Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness MTCMOS(DOT-MTCMOS)
• Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor
• Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
• Room-Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors
• Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
• Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule
• DMA SRAM TEGにより解析したSRAMのスタティックノイズマージンにおけるDIBLばらつきの影響(IEDM特集(先端CMOSデバイス・プロセス技術))
• Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime
• Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
• Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond
• 微細MOSトランジスタにおけるDIBLおよび電流立上り電圧ばらつきの統計解析(低電圧/低消費電力技術,新デバイス・回路とその応用)
• Takeuchiプロットを用いたHigh-k/Metal-Gate MOSFETのばらつき評価(低電圧/低消費電力技術,新デバイス・回路とその応用)
• 微細MOSトランジスタにおけるDIBLおよび電流立上り電圧ばらつきの統計解析(低電圧/低消費電力技術,新デバイス・回路とその応用)
• Takeuchiプロットを用いたHigh-k/Metal-Gate MOSFETのばらつき評価(低電圧/低消費電力技術,新デバイス・回路とその応用)
• 完全空乏型SOI MOSFETにおける特性ばらつきとランダムテレグラフノイズ(プロセス科学と新プロセス技術)
• Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current
• Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode
• Experimental Study on Mobility Universality in (100) Ultrathin Body nMOSFETs with SOI Thickness of 5 nm
• Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
• Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor
• Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
• 100億トランジスタのしきい値電圧ばらつき(IEDM特集(先端CMOSデバイス・プロセス技術))
• Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs
• On the Origin of Negative Differential Conductance in Ultranarrow-Wire-Channel Silicon Single-Electron and Single-Hole Transistors
• Superior $\langle 110\rangle$-Directed Electron Mobility to $\langle 100\rangle$-Directed Electron Mobility in Ultrathin Body (110) n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
• Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
• Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor
• Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications
• Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method
• Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
• Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors
• Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations
• Current Drive Improvement Using Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable-Threshold-Voltage Complementary MOS (VTCMOS)
• Optimum Device Consideration for Standby Power Reduction Scheme Using Drain-Induced Barrier Lowering
• Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors
• Integration of Complementary Metal--Oxide--Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature
• Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect
• Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature
• Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
• Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
• Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm
• Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors
• Large Electron Addition Energy above 250 meV in a Silicon Quantum Dot in a Single-Electron Transistor
• Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
• NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
• 超低電力LSIを実現する薄膜BOX-SOI(SOTB)CMOS技術(SOIテクノロジ,低電圧/低消費電力技術,新デバイス・回路とその応用)
• 超低電力LSIを実現する薄膜BOX-SOI(SOTB)CMOS技術(SOIテクノロジ,低電圧/低消費電力技術,新デバイス・回路とその応用)
• 完全空乏型Silicon-on-Thin-BOX (SOTB) MOSトランジスタにおけるドレイン電流ばらつき(SOIテクノロジ,低電圧/低消費電力技術,新デバイス・回路とその応用)
• 完全空乏型Silicon-on-Thin-BOX (SOTB) MOSトランジスタにおけるドレイン電流ばらつき(SOIテクノロジ,低電圧/低消費電力技術,新デバイス・回路とその応用)
• SRAMセル安定性の一括ポストファブリケーション自己修復技術(低電圧・高信頼SRAM,低電圧/低消費電力技術,新デバイス・回路とその応用)
• SRAMセル安定性の一括ポストファブリケーション自己修復技術(低電圧・高信頼SRAM,低電圧/低消費電力技術,新デバイス・回路とその応用)
• Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
• Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
• Future Electron Devices and SOI Technology —Semi-Planar SOI MOSFETs with Sufficient Body Effect—
• Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

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