Majima Hideaki | Institute Of Industrial Science University Of Tokyo
スポンサーリンク
概要
関連著者
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Majima Hideaki
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Saitoh Masumi
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science University Of Tokyo
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SAITOH Masumi
Institute of Industrial Science, University of Tokyo
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TAKAHASHI Nobuyoshi
Institute of Industrial Science, University of Tokyo
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Inukai Takashi
Institute Of Industrial Science The University Of Tokyo
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Wang Haining
Institute Of Industrial Science University Of Tokyo
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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Majima Hideaki
The Institute Of Industrial Science The University Of Tokyo
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Hiramoto Toshiro
The Institute Of Industrial Science The University Of Tokyo:vlsi Design And Education Center The Uni
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INUKAI Takashi
The Institute of Industrial Science, The University of Tokyo
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WANG Haining
Institute of Industrial Science, University of Tokyo
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INUKAI Takashi
Institute of Industrial Science, University of Tokyo
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Majima H
The Institute Of Industrial Science The University Of Tokyo
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Inukai T
The Institute Of Industrial Science The University Of Tokyo
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Takahashi N
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Majima Hideaki
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Inukai Takashi
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
著作論文
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
- Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots