Saitoh Masumi | Institute Of Industrial Science University Of Tokyo
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概要
関連著者
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Saitoh Masumi
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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SAITOH Masumi
Institute of Industrial Science, University of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science University Of Tokyo
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Hiramoto T
Univ. Tokyo
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Hiramoto Toshiro
The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi
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Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers
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Hiramoto Toshiro
Inst. Of Industrial Science And Cinqie University Of Tokyo
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Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo
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Harata Hidehiro
Institute Of Industrial Science University Of Tokyo
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Majima Hideaki
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
The Institute Of Industrial Science The University Of Tokyo:vlsi Design And Education Center The Uni
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TAKAHASHI Nobuyoshi
Institute of Industrial Science, University of Tokyo
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Tsutsui Gen
Institute Of Industrial Science University Of Tokyo
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Nagumo Toshiharu
Institute Of Industrial Science The University Of Tokyo
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Hiramoto Toshiro
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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SAITOH Masumi
Toshiba Corporation
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Inukai Takashi
Institute Of Industrial Science The University Of Tokyo
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Miyaji Kousuke
Institute Of Industrial Science University Of Tokyo
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Wang Haining
Institute Of Industrial Science University Of Tokyo
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Kobayashi Masaharu
Institute Of Industrial Science University Of Tokyo
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HARATA Hidehiro
Institute of Industrial Science, University of Tokyo
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Saitoh Masumi
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Majima Hideaki
The Institute Of Industrial Science The University Of Tokyo
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Putra Arifin
Institute Of Industrial Science University Of Tokyo
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TAMSIR Arifin
Institute of Industrial Science, University of Tokyo
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TSUTSUI Gen
Institute of Industrial Science, University of Tokyo
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MIYAJI Kousuke
Institute of Industrial Science, University of Tokyo
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NAGUMO Toshiharu
Institute of Industrial Science, University of Tokyo
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KOBAYASHI Masaharu
Institute of Industrial Science, University of Tokyo
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INUKAI Takashi
The Institute of Industrial Science, The University of Tokyo
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WANG Haining
Institute of Industrial Science, University of Tokyo
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INUKAI Takashi
Institute of Industrial Science, University of Tokyo
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YANAGIDAIRA Kosuke
Graduate School of Science and Engineering, Chuo University
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YANAGIDAIRA Kosuke
Institute of Industrial Science, University of Tokyo
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Ishikuro Hiroki
Institute Of Industrial Science University Of Tokyo
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Majima H
The Institute Of Industrial Science The University Of Tokyo
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Inukai T
The Institute Of Industrial Science The University Of Tokyo
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Tamsir Arifin
Institute Of Industrial Science University Of Tokyo
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Takahashi N
Institute Of Industrial Science University Of Tokyo
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Yanagidaira Kosuke
Institute Of Industrial Science University Of Tokyo
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Nagumo Toshiharu
Institute Of Industrial Science University Of Tokyo
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Harata Hidehiro
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ishikuro Hiroki
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
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Takahashi Nobuyoshi
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
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Majima Hideaki
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Inukai Takashi
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
著作論文
- Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
- Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories
- Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor
- Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
- Room-Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors
- Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime
- Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor
- Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
- Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs
- Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor
- Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors
- Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature
- Large Electron Addition Energy above 250 meV in a Silicon Quantum Dot in a Single-Electron Transistor
- Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin-Body Silicon Nanocrystal Memories