Tsutsui Gen | Institute Of Industrial Science University Of Tokyo

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概要

• TSUTSUI Genの詳細を見る
• 同名の論文著者
• Institute Of Industrial Science University Of Tokyoの論文著者

関連著者

• Tsutsui Gen

  Institute Of Industrial Science University Of Tokyo

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

• Hiramoto Toshiro

  Institute Of Industrial Science University Of Tokyo

• TSUTSUI Gen

  Institute of Industrial Science, University of Tokyo

• Saitoh Masumi

  Institute Of Industrial Science University Of Tokyo

• Hiramoto T

  Univ. Tokyo

• SAITOH Masumi

  Institute of Industrial Science, University of Tokyo

• SAITOH Masumi

  Toshiba Corporation

• Hiramoto Toshiro

  The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi

• Hiramoto Toshiro

  Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers

• Hiramoto Toshiro

  Inst. Of Industrial Science And Cinqie University Of Tokyo

• Hiramoto Toshiro

  Vlsi Design And Education Center The University Of Tokyo

• Putra Arifin

  Institute Of Industrial Science University Of Tokyo

• TAMSIR Arifin

  Institute of Industrial Science, University of Tokyo

• JANUAR Doni

  Institute of Industrial Science, University of Tokyo

• NAGUMO Toshiharu

  Institute of Industrial Science, University of Tokyo

• Januar Doni

  Institute Of Industrial Science University Of Tokyo

• Tamsir Arifin

  Institute Of Industrial Science University Of Tokyo

• Nagumo Toshiharu

  Institute Of Industrial Science The University Of Tokyo

• Hiramoto Toshiro

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• Shimizu Ken

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• Tsutsui Gen

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

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著作論文

• Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
• Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement
• Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors
• Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime
• Experimental Study on Mobility Universality in (100) Ultrathin Body nMOSFETs with SOI Thickness of 5 nm
• Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors
• Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations

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