Hiramoto Toshiro | Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers

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著作論文

Untitled - Foreword
Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement
Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
(マイクロマシン)
Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations(Device,Low-Power, High-Speed LSIs and Related Technologies)
Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs
Future Electron Devices and SOI Technology : Semi-Planar SOI MOSFETs with Sufficient Body Effect
Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories
Suppression of Stand-by Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness-Multiple Threshold Voltage CMOS(DOT-MTCMOS)
Special Issue on Advanced Sub-0.1 μm CMOS Devices
Mobility Degradation in (110)-Oriented Ultra-thin Body Double-Gate pMOSFETs with SOI Thickness of less than 5nm
Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]-Directed Channels at Room Temperature
Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor
Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dot
Re-examination of Impact of Intrinsic Dopant Fluctuations on SRAM Static Noise Margin
Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
Suppression of Stand-by Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness MTCMOS(DOT-MTCMOS)
Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor
Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method

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