Nishida Akio | MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
Channel Dopant Distribution in Metal--Oxide--Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography
Power Spectrum of Smoothed Line-Edge and Line-Width Roughness
Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond
Tip-to-Sample Distance Dependence of $dC/dZ$ Imaging in Thin Dielectric Film Measurement
Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2 Films Evaluated by Scanning Capacitance Microscopy

スポンサーリンク