Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
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概要
- 論文の詳細を見る
- 2011-06-25
著者
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KOGUCHI Masanari
Central Research Laboratory, Hitachi Ltd.
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NISHIDA Akio
MIRAI-Selete
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Mogami Tohru
Robust Transistor Program Nano Silicon Integration Project Research Department 4 Mirai-selete
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Tsunomura Takaaki
Robust Transistor Program Nano Silicon Integration Project Research Department 4 Mirai-selete
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Yano Fumiko
Mirai-selete
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ONO Shiano
Central Research Laboratory, Hitachi, Ltd.
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YAMANE Miyuki
Central Research Laboratory, Hitachi, Ltd.
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OKUSHIMA Hirohisa
Hitachi High-Technologies Corporation
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SHINADA Hiroyuki
Central Research Laboratory, Hitachi, Ltd.
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KAKIBAYASHI Hiroshi
Hitachi High-Technologies Corporation
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TSUNOMURA Takaaki
MIRAI-Selete
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MOGAMI Tohru
MIRAI-Selete
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Yamane Miyuki
Central Research Laboratory Hitachi Ltd.
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Ono Shiano
Central Research Laboratory Hitachi Ltd.
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Koguchi Masanari
Central Research Laboratory Hitachi Ltd.
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Koguchi Masanari
Central Research Laboratory Hitachi Ltd
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Shinada Hiroyuki
Central Research Laboratory Hitachi Ltd.
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Nishida Akio
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Mogami Tohru
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
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Yano Fumiko
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tsunomura Takaaki
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
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