TSUNOMURA Takaaki | MIRAI-Selete

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著作論文

Channel Dopant Distribution in Metal--Oxide--Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography
Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

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