Channel Dopant Distribution in Metal--Oxide--Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography

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概要

• 論文の詳細を見る

• Randomness of channel dopant distribution in metal--oxide--semiconductor field-effect transistor (MOSFET) structures was analyzed by laser-assisted atom probe tomography. Three-dimensional dopant distributions of boron and arsenic atoms in MOSFET channels which define the threshold voltage were obtained with nearly atomic scale resolution. In order to achieve highly statistical precision, about 130 million atoms were detected in the channel region. We found that the distribution of boron atoms was consistent with a random solid solution in a matrix. Meanwhile, the arsenic atom distribution is slightly deviated from the random distribution, implying the possibility of arsenic cluster formation.

• 2011-03-25

著者

• Toyama Takeshi

  The Oarai Center Institute For Materials Research Tohoku University

• Nagai Yasuyoshi

  The Oarai Center Institute For Materials Research Tohoku University

• Yano Fumiko

  Mirai-selete

• TSUNOMURA Takaaki

  MIRAI-Selete

• Takamizawa Hisashi

  The Oarai Center Institute For Materials Research Tohoku University

• Shimizu Yasuo

  The Oarai Center Institute For Materials Research Tohoku University

• Nishida Akio

  MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan

• Nishida Akio

  MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Mogami Tohru

  MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan

• Inoue Koji

  The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

• Shimizu Yasuo

  The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

• Yano Fumiko

  MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan

• Yano Fumiko

  MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Takamizawa Hisashi

  The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

• Toyama Takeshi

  The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

• Tsunomura Takaaki

  MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan

• INOUE Koji

  The Oarai Center, Institute for Materials Research, Tohoku University

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