Putra Arifin | Institute Of Industrial Science University Of Tokyo
スポンサーリンク
概要
関連著者
-
Putra Arifin
Institute Of Industrial Science University Of Tokyo
-
Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
-
Kamohara Shiro
Mirai-selete
-
Nishida Akio
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
-
TSUNOMURA Takaaki
MIRAI-Selete
-
Tsunomura Takaaki
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
-
Hiramoto Toshiro
Institute Of Industrial Science University Of Tokyo
-
NISHIDA Akio
MIRAI-Selete
-
Hiramoto Toshiro
The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi
-
Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers
-
Hiramoto Toshiro
Inst. Of Industrial Science And Cinqie University Of Tokyo
-
Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo
-
Tsutsui Gen
Institute Of Industrial Science University Of Tokyo
-
Saitoh Masumi
Institute Of Industrial Science University Of Tokyo
-
Hiramoto Toshiro
Robust Transistor Program Nano Silicon Integration Project Research Department 4 Mirai-selete
-
Nishida Akio
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Toshiro Hiramoto
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Shimizu Ken
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Chiho Lee
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Lee Chiho
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Putra Arifin
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Arifin Tamsir
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Kamohara Shiro
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Ken Shimizu
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Takeuchi Kiyoshi
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Tsunomura Takaaki
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
- Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime
- Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
- Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond
- Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide