Shimizu Ken | Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
スポンサーリンク
概要
- Shimizu Kenの詳細を見る
- 同名の論文著者
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japanの論文著者
関連著者
-
Shimizu Ken
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
-
HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
-
Putra Arifin
Institute Of Industrial Science University Of Tokyo
-
Tsutsui Gen
Institute Of Industrial Science University Of Tokyo
-
Miyaji Kousuke
Institute Of Industrial Science University Of Tokyo
-
Toshiro Hiramoto
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Toshiro Hiramoto
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Miyaji Kousuke
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Chen Jiezhi
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Saraya Takura
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Takuya Saraya
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Tsutsui Gen
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Chiho Lee
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Lee Chiho
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Arifin Tamsir
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Ken Shimizu
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
SARAYA Takuya
Institute Industrial Science, The University of Tokyo
著作論文
- Experimental Study on Mobility Universality in (100) Ultrathin Body nMOSFETs with SOI Thickness of 5 nm
- Superior $\langle 110\rangle$-Directed Electron Mobility to $\langle 100\rangle$-Directed Electron Mobility in Ultrathin Body (110) n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method
- Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide
- Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm