Chen Jiezhi | Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

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概要

関連著者

Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
Miyaji Kousuke
Institute Of Industrial Science University Of Tokyo
Miyaji Kousuke
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Chen Jiezhi
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Saraya Takura
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Shimizu Ken
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo

著作論文

Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method

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