HIRAMOTO Toshiro | Institute Industrial Science, The University of Tokyo
スポンサーリンク
概要
関連著者
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science University Of Tokyo
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SARAYA Takuya
Institute Industrial Science, The University of Tokyo
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Saitoh Masumi
Institute Of Industrial Science University Of Tokyo
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SARAYA Takuya
Institute of Industrial Science, University of Tokyo
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Ishikuro Hiroki
Institute Of Industrial Science University Of Tokyo
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Takamiya Makoto
Institute Of Industrial Science The University Of Tokyo
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Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers
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Hiramoto Toshiro
Inst. Of Industrial Science And Cinqie University Of Tokyo
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Nagumo Toshiharu
Institute Of Industrial Science The University Of Tokyo
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Hiramoto T
Univ. Tokyo
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Hiramoto Toshiro
The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi
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Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo
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ISHIKURO Hiroki
Institute of Industrial Science, University of Tokyo
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TAKAMIYA Makoto
Institute of Industrial Science, University of Tokyo
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SARAYA Takuya
The Institute of Industrial Science, The University of Tokyo
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Ishikuro H
Univ. Tokyo Tokyo Jpn
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Takamiya Makoto
Institute Of Industrial Science University Of Tokyo
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Saraya Takuya
The Institute Of Industrial Science The University Of Tokyo
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Duyet Tran
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
The Institute Of Industrial Science The University Of Tokyo:vlsi Design And Education Center The Uni
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Inukai Takashi
Institute Of Industrial Science The University Of Tokyo
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SAITOH Masumi
Institute of Industrial Science, University of Tokyo
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INUKAI Takashi
Institute of Industrial Science, University of Tokyo
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Miyaji Kousuke
Institute Of Industrial Science University Of Tokyo
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KUMAR Anil
Institute Industrial Science, The University of Tokyo
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NAGUMO Toshiharu
Institute of Industrial Science, University of Tokyo
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INUKAI Takashi
The Institute of Industrial Science, The University of Tokyo
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Inukai T
The Institute Of Industrial Science The University Of Tokyo
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Tsutsui Gen
Institute Of Industrial Science University Of Tokyo
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Ikoma T
Univ. Tokyo Tokyo Jpn
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Ikoma Toshiaki
The Institute Of Industrial Science The University Of Tokyo
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Mizutani Tomoko
Institute Of Industrial Science The University Of Tokyo
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Harata Hidehiro
Institute Of Industrial Science University Of Tokyo
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Putra Arifin
Institute Of Industrial Science University Of Tokyo
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Shi Yi
Institute Of Biophysics Academia Sinica
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IKOMA Toshiaki
Texas Instruments Tsukuba R&D Center
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SAITOH Masumi
Toshiba Corporation
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YASUDA Yuri
Institute of Industrial Science, University of Tokyo
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Ohtou Tetsu
Institute Of Industrial Science The University Of Tokyo
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Yasuda Yuri
Institute Of Industrial Science University Of Tokyo:chuo University
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Koura Hiroshi
Institute Of Industrial Science The University Of Tokyo
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Hiramoto Toshiro
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Mao Ke
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Shi Yi
Institute Of Industrial Science University Of Tokyo:department Of Physics Nanjing University
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Im Hyunsik
Institute Of Industrial Science
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Im Hyunsik
Institute Of Industrial Science The University Of Tokyo
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Yasuda Yukio
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Majima Hideaki
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Univ. Tokyo Tokyo Jpn
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Kamohara Shiro
Mirai-selete
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HASHIGUCHI Gen
Institute of Industrial Science, University of Tokyo
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Fujii T
Institute Of Industrial Science University Of Tokyo
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FUJII Tomoyuki
Institute of Industrial Science, University of Tokyo
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IKOMA Toshiaki
Institute of Industrial Science, University of Tokyo
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HASHIGUCHI Gen
Faculty of Engineering, Kagawa University
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MIYAJI Kousuke
Institute of Industrial Science, University of Tokyo
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OHTOU Tetsu
Institute of Industrial Science, The University of Tokyo
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SAITO Toshiki
Institute of Industrial Science, University of Tokyo
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TAKAHASHI Nobuyoshi
Institute of Industrial Science, University of Tokyo
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KOURA Hiroshi
Institute of Industrial Science, the University of Tokyo
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Yasuda Y
Univ. Tokyo Tokyo Jpn
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Sugii Nobuyuki
Central Research Laboratory Hitachi Ltd.
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Fujii T
Tohoku Univ. Sendai Jpn
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Tsuchiya Ryuta
Central Research Laboratory Hitachi Ltd.
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Hashiguchi G
Faculty Of Engineering Kagawa University
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Ikoma Toshiaki
Institute Of Industrial Science The University Of Tokyo
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Takahashi N
Institute Of Industrial Science University Of Tokyo
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Kobayashi Masaharu
Institute Of Industrial Science University Of Tokyo
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Kim Ilgweon
Institute Of Industrial Science University Of Tokyo
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HARATA Hidehiro
Institute of Industrial Science, University of Tokyo
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Miyano Shinji
Semiconductor Technology Academic Research Center
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Park Sangsu
Institute Of Industrial Science University Of Tokyo
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Ishigaki Takashi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Morita Yusuke
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Iwamatsu Toshiaki
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inoue Yasuo
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Nishida Akio
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sugii Nobuyuki
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Shimizu Ken
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Iwamatsu Toshiaki
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Inoue Yasuo
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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平本 俊郎
東京大学生産技術研究所
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SAITOH Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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SAITO Keisuke
Application Laboratory
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Im Hyunsik
Department Of Semiconductor Science Dongguk University
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Majima Hideaki
The Institute Of Industrial Science The University Of Tokyo
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Hiramoto Toshiro
Vlsi Design And Education Center University Of Tokyo
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NISHIDA Akio
MIRAI-Selete
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SAITO Kenichi
Institute of Industrial Science, University of Tokyo
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TAMSIR Arifin
Institute of Industrial Science, University of Tokyo
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TSUTSUI Gen
Institute of Industrial Science, University of Tokyo
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YOKOYAMA Kouki
Institute of Industrial Science, The University of Tokyo
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MOCHIZUKI Yasunori
Institute of Industrial Science, University of Tokyo
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WANG Haining
Institute of Industrial Science, University of Tokyo
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NAGATA Eiji
Institute of Industrial Science, University of Tokyo
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YANAGIDAIRA Kosuke
Graduate School of Science and Engineering, Chuo University
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Ipposhi Takashi
Renesas Technology Corp.
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Sakurai Takayasu
Institute Of Industrial Science & Center For Collaborative Research The University Of Tokyo
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Mochizuki Yasunori
Institute Of Industrial Science University Of Tokyo
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Mochizuki Yasuhiro
Hitachi Research Laboratory Hitachi Ltd.
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Majima H
The Institute Of Industrial Science The University Of Tokyo
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Nagata Eiji
Institute Of Industrial Science University Of Tokyo:chuo University
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Gomyo Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Yokoyama Kouki
Institute Of Industrial Science The University Of Tokyo
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PARK Sangsu
Institute of Industrial Science, University of Tokyo
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IM Hyunsik
Univ. of Dongguk, Dept. of Semiconductor Science
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KIM Ilgweon
Institute of Industrial Science, University of Tokyo
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Tamsir Arifin
Institute Of Industrial Science University Of Tokyo
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Saito K
Akita Univ. Akita Jpn
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Saito T
Institute Of Industrial Science University Of Tokyo
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Wang Haining
Institute Of Industrial Science University Of Tokyo
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Kimura Shinichiro
Central Research Laboratory Hitachi Ltd.
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Kumar Anil
Institute Of Industrial Science The University Of Tokyo
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Im Hyunsik
Univ. Of Dongguk Dept. Of Semiconductor Science
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Hiramoto Toshiro
Robust Transistor Program Nano Silicon Integration Project Research Department 4 Mirai-selete
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Nagumo Toshiharu
Institute Of Industrial Science University Of Tokyo
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Yoshimoto Hiroyuki
Central Laboratories For Frontier Technology Kirin Holdings Company Limited:(present Office)research
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Saito Keisuke
Application Laboratory Bruker Axs
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TSUNOMURA Takaaki
MIRAI-Selete
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Kawaguchi Hiroshi
Institute Of High Speed Mechanics Tohoku University
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Inukai Takashi
Institute Of Industrial Science University Of Tokyo
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Oda Hidekazu
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Oda Hidekazu
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Takamiya Makoto
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ipposhi Takashi
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsuchiya Ryuta
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Nishida Akio
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Koura Hiroshi
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Im Hyunsik
Department of Semiconductor Science, Dongguk University, 3-26 Pil-dong, Chung-gu, Seoul 100-715, Korea
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Saitoh Masumi
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Nagumo Toshiharu
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Hiramoto Toshiro
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Miyaji Kousuke
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Chen Jiezhi
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Saraya Takura
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Yoshimoto Hiroyuki
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Takuya Saraya
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Ikoma Toshiaki
Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Inukai Takashi
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Kimura Shinichiro
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Hiramoto Toshiro
Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato-ku, Tokyo 106, Japan
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Kawaguchi Hiroshi
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Sakurai Takayasu
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Putra Arifin
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Harata Hidehiro
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ishikuro Hiroki
Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato-ku, Tokyo 106, Japan
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Kamohara Shiro
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takeuchi Kiyoshi
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tsunomura Takaaki
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
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Tsunomura Takaaki
MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Gomyo Hiroyuki
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Majima Hideaki
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Yamamoto Yoshiki
Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Makiyama Hideki
Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Iwamatsu Toshiaki
Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Oda Hidekazu
Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Sugii Nobuyuki
Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Saito Toshiki
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan
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KUMAR Anil
Institute of Industrial Science, The University of Tokyo
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Shi Yi
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
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Saraya Takuya
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Saraya Takuya
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
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ALIAS Nurul
Institute Industrial Science, The University of Tokyo
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Nozue Motoki
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Suzuki Ryota
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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MIZUTANI Tomoko
Institute of Industrial Science, The University of Tokyo
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Mizutani Tomoko
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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HIRAMOTO Toshiro
Institute of Industrial Science, The University of Tokyo
著作論文
- Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
- Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor ( Quantum Dot Structures)
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
- Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
- Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
- High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations(Device,Low-Power, High-Speed LSIs and Related Technologies)
- Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs
- Future Electron Devices and SOI Technology : Semi-Planar SOI MOSFETs with Sufficient Body Effect
- Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect Transistor Memories with Silicon Nanocrystal Floating Gates
- Optimum Condutions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
- Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
- Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
- Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Extremely Large Amplitude of Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
- Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)
- Origin of Critical Substrate Bias in Variable Threshold Voltage CMOS
- Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
- Suppression of Stand-by Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness MTCMOS(DOT-MTCMOS)
- Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
- Room-Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors
- Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime
- Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
- Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current
- Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode
- Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
- Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor
- Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
- Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs
- On the Origin of Negative Differential Conductance in Ultranarrow-Wire-Channel Silicon Single-Electron and Single-Hole Transistors
- Superior $\langle 110\rangle$-Directed Electron Mobility to $\langle 100\rangle$-Directed Electron Mobility in Ultrathin Body (110) n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
- Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
- Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method
- Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
- Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors
- Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations
- Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors
- Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect
- Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature
- Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
- Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors
- Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress
- Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
- NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
- Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
- Future Electron Devices and SOI Technology —Semi-Planar SOI MOSFETs with Sufficient Body Effect—
- Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)
- Integration of Complementary Metal-Oxide-Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature (Special Issue : Solid State Devices and Materials)
- Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin-Body Silicon Nanocrystal Memories