Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors

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概要

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• The variability of subthreshold swing (SS) in fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) MOSFETs is statistically analyzed and compared with that of conventional bulk MOSFETs. It is newly found that SS variability is small enough in deep subthreshold region (small drain current I_{\text{ds}}) while it increases as increasing I_{\text{ds}}. The mechanisms of this behavior is intensively investigated and it is found that the increase in SS variability is caused by current-onset voltage (COV) variability that is due to random dopant fluctuation (RDF). Since SOTB FETs have small COV variability thanks to an intrinsic channel, SS variability is much smaller than bulk FETs, which is a great advantage of FD SOTB in terms of I_{\text{on}}/I_{\text{off}} ratio.

• 2013-04-25

著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Mizutani Tomoko

  Institute Of Industrial Science The University Of Tokyo

• Yamamoto Yoshiki

  Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan

• Makiyama Hideki

  Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan

• Iwamatsu Toshiaki

  Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan

• Oda Hidekazu

  Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan

• Sugii Nobuyuki

  Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan

• Mizutani Tomoko

  Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

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