Current Drive Improvement Using Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable-Threshold-Voltage Complementary MOS (VTCMOS)

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概要

• 論文の詳細を見る

• A new scheme for recovering the current drive that is degraded due to the finite inversion layer thickness and gate depletion, using a high-speed mode variable-threshold-voltage complementary metal oxide semiconductor (VTCMOS), has been proposed. This scheme utilizes the body effect. The effects of finite inversion layer thickness and gate depletion enhance the body effect, and therefore substrate bias works more effectively. This enhancement of body effect is experimentally examined by measuring fully depleted silicon-on-insulator (FD SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The effect of gate oxide thickness, the scalability of this scheme, and the impact of the short-channel effect are also discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Nagumo Toshiharu

  Institute Of Industrial Science The University Of Tokyo

• Hiramoto Toshiro

  Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

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