Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule
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概要
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In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effect-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Ishikuro Hiroki
Institute Of Industrial Science University Of Tokyo
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- Untitled - Foreword
- Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
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- Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
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- Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors
- Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations
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