High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Duyet Tran

  Institute Of Industrial Science University Of Tokyo

• Yasuda Yukio

  School Of Electrical Engineering And Electronics Toyohashi University Of Technology

• Hiramoto Toshiro

  Institute Of Industrial Science University Of Tokyo

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Hiramoto Toshiro

  Vlsi Design And Education Center University Of Tokyo

• SARAYA Takuya

  Institute of Industrial Science, University of Tokyo

• TAKAMIYA Makoto

  Institute of Industrial Science, University of Tokyo

• YASUDA Yuri

  Institute of Industrial Science, University of Tokyo

• SARAYA Takuya

  The Institute of Industrial Science, The University of Tokyo

• Takamiya Makoto

  Institute Of Industrial Science University Of Tokyo

• Takamiya Makoto

  Institute Of Industrial Science The University Of Tokyo

• Yasuda Y

  Univ. Tokyo Tokyo Jpn

• Yasuda Yuri

  Institute Of Industrial Science University Of Tokyo:chuo University

• Saraya Takuya

  The Institute Of Industrial Science The University Of Tokyo

• SARAYA Takuya

  Institute Industrial Science, The University of Tokyo

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

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