Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH_4
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-04-20
著者
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Yasuda Yukio
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Zaima Shigeaki
School Of Engineering Department Of Crystalline Materials Science Nagoya University
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Koide Yasuo
School Of Engineering Department Of Crystalline Materials Science Nagoya University
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OHSHIMA Naoki
School of Engineering, Department of Crystalline Materials Science, Nagoya University
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Ohshima Naoki
School Of Engineering Department Of Crystalline Materials Science Nagoya University
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Yasuda Yukio
School Of Engineering Department Of Crystalline Materials Science Nagoya University
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- Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH_4