Takamiya Makoto | Institute Of Industrial Science The University Of Tokyo

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概要

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著作論文

Difficulty of Power Supply Voltage Scaling in Large Scale Subthreshold Logic Circuits
Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories
High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
A 100Mbps, 4.1pJ/bit Threshold Detection-Based Impulse Radio UWB Transceiver in 90nm CMOS
An Outside-Rail Opamp Design Relaxing Low-Voltage Constraint on Future Scaled Transistors(Analog and Communications,Low-Power, High-Speed LSIs and Related Technologies)
Optimum Condutions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
New Measurement Technique for Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs
Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
A 1.76mW, 100Mbps Impulse Radio UWB Receiver with Multiple Sampling Correlators Eliminating Need for Phase Synchronization in 65-nm CMOS
C-12-58 0.18-V Input Charge Pump with Forward Body Biasing
Misleading energy and performance claims in sub/near threshold digital systems (集積回路)
A 1-V input, 0.2-V to 0.47-V output switched-capacitor DC-DC converter with pulse density and width modulation (PDWM) for 57% ripple reduction (集積回路)
A charge-domain auto- and cross-correlation based IR-UWB receiver with power- and area-efficient PLL for 62.5ps step data synchronization in 65nm CMOS (集積回路)
An On-Chip Noise Canceller with High Voltage Supply Lines for Nanosecond-Range Power Supply Noise
0.18-V Input Charge Pump with Forward Body Bias to Startup Boost Converter for Energy Harvesting Applications
0.6V Voltage Shifter and Clocked Comparator for Sampling Correlation-Based Impulse Radio UWB Receiver
0.5-V Input Digital Low-Dropout Regulator (LDO) with 98.7% Current Efficiency in 65nm CMOS
A Variable Output Voltage Switched-Capacitor DC-DC Converter with Pulse Density and Width Modulation (PDWM) for 57% Ripple Reduction at Low Output Voltage
Power Supply Voltage Dependence of Within-Die Delay Variation of Regular Manual Layout and Irregular Place-and-Route Layout
Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

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