SAKURAI Takayasu | The University of Tokyo
スポンサーリンク
概要
関連著者
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SAKURAI Takayasu
The University of Tokyo
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TAKAMIYA Makoto
The University of Tokyo
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Takamiya Makoto
The Univ. Of Tokyo
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ISHIDA Koichi
The University of Tokyo
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Takamiya Makoto
Institute Of Industrial Science The University Of Tokyo
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Sakurai Takayasu
Institute Of Industrial Science The University Of Tokyo
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YASUFUKU Tadashi
The University of Tokyo
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Chen Po-hung
The University Of Tokyo
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Okuma Yasuyuki
Semiconductor Technology Academic Research Center (starc)
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Zhang Xin
The University Of Tokyo
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Ryu Yoshikatsu
Semiconductor Technology Academic Research Center (STARC)
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Kuroda Tadahiro
Department of Electrical and Electronic Engineering Keio University
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KURODA Tadahiro
Keio University, Dept. of Electronics and Electrical Engineering
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MIURA Noriyuki
Keio University
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MIYAMOTO Shinji
Toshiba Corporation
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NAKAI Hiroto
Toshiba Corporation
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TAKEUCHI Ken
The University of Tokyo
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Kawaguchi Hiroshi
Kobe Univ. Kobe‐shi Jpn
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Miura Noriyuki
Keio Univ.
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PIAO Zhe
The University of Tokyo
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Kuroda Tadahiro
Keio Univ.
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Miura Noriyuki
Keio University Department Of Electronics And Electrical Engineering
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Pu Yu
University of Tokyo
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PU Yu
The University of Tokyo
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MIURA Noriyuki
the Department of Electronics and Electrical Engineering, Keio University
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LIU Lechang
The University of Tokyo
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桜井 貴康
東京大学
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TAGO Masamoto
NEC Corporation
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桜井 貴康
Institute Of Industrial Science University Of Tokyo
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MIZUNO Masayuki
NEC Corporation
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Tran Canh
The University Of Tokyo
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Kawaguchi H
Institute Of Industrial Science The University Of Tokyo:(present Office)kobe University
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MIZOGUCHI Daisuke
Keio University, Department of Electronics and Electrical Engineering
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NIIYAMA Taro
The University of Tokyo
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MURAKATA Masami
Semiconductor Technology Academic Research Center (STARC)
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NIITSU Kiichi
Keio University
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INOUE Mari
Keio University
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NAKAGAWA Yoshihiro
NEC Corporation
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Kawaguchi H
Univ. Tokyo Tokyo Jpn
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Antono Danardono
Institute Of Industrial Science The University Of Tokyo:(present Office)sony Corporation
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Tago Masamoto
Nec Electronics Corp. Sagamihara‐shi Jpn
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ANTONO Danardono
the University of Tokyo
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INAGAKI Kenichi
the University of Tokyo
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Murakata Masami
Semiconductor Da & Test Engineering Center Toshiba Corporation
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CHEW Po-Hong
The University of Tokyo
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WATANABE Kazunori
Semiconductor Technology Academic Research Center (STARC)
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Mizoguchi Daisuke
Keio University
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NAKAMURA Yasumi
University of Tokyo
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Kawaguchi Hiroshi
Kobe University
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Kim Gil-su
Samsung Electronics
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IKEUCHI Katsuyuki
The University of Tokyo
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KUSAMITSU Hideki
Association of Super-Advanced Electronics Technologies (ASET)
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DAITO Mutsuo
Association of Super-Advanced Electronics Technologies (ASET)
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Nakamura Yasumi
The University Of Tokyo
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Takeuchi Ken
The Univ. Of Tokyo
著作論文
- Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories
- Difficulty of Power Supply Voltage Scaling in Large Scale Subthreshold Logic Circuits
- Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories
- Daisy Chain Transmitter for Power Reduction in Inductive-Coupling CMOS Link(Analog and Communications,Low-Power, High-Speed LSIs and Related Technologies)
- A 1.2 Gbps Non-contact 3D-Stacked Inter-Chip Data Communications Technology (Interface and Interconnect Techniques, VLSI Design Technology in the Sub-100nm Era)
- Low-Power Low-Leakage FPGA Design Using Zigzag Power Gating, Dual-V_/V_ and Micro-V_-Hopping (Low Power Techniques, VLSI Design Technology in the Sub-100nm Era)
- Trends of On-Chip Interconnects in Deep Sub-Micron VLSI (Interconnect Technique, VLSI Design Technology in the Sub-100nm Era)
- C-12-58 0.18-V Input Charge Pump with Forward Body Biasing
- A 1-V input, 0.2-V to 0.47-V output switched-capacitor DC-DC converter with pulse density and width modulation (PDWM) for 57% ripple reduction (集積回路)
- 1Gb/s, 50μm×50μm Pads on Board Wireless Connector Based on Track-and-Charge Scheme Allowing Contacted Signaling
- A Variable Output Voltage Switched-Capacitor DC-DC Converter with Pulse Density and Width Modulation (PDWM) for 57% Ripple Reduction at Low Output Voltage
- Power Supply Voltage Dependence of Within-Die Delay Variation of Regular Manual Layout and Irregular Place-and-Route Layout
- A 315MHz Power-Gated Ultra Low Power Transceiver in 40nm CMOS for Wireless Sensor Network
- A 315MHz Power-Gated Ultra Low Power Transceiver in 40nm CMOS for Wireless Sensor Network