SARAYA Takuya | The Institute of Industrial Science, The University of Tokyo

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概要

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著作論文

Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs(Special Issue on Advanced Sub-0.1μm CMOS Devices)
Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
New Measurement Technique for Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs
Extremely Large Amplitude of Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures

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