Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
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概要
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In this paper, the effects of side surface roughness on mobility behaviors in single-silicon-nanowire metal--oxide--semiconductor field-effect transistors (MOSFETs) are discussed on the basis of intrinsic carrier mobility data obtained by direct split capacitance--voltage (C--V) method measurement for the first time. To investigate the mechanisms that dominate the mobility degradation in narrower nanowires, low-temperature measurements are performed. It is found that phonon scattering has little dependence on nanowire width, indicating that the mobility degradation in our tri-gate nanowire MOSFETs is caused by surface roughness scattering. It is also found by analyzing the nanowire width dependence of mobility that the process-induced roughness on the side surface is the main source of mobility degradation in nanowire pFETs, while the degradation caused by the side surface roughness is negligible in nanowire nFETs.
- 2013-04-25
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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SARAYA Takuya
Institute of Industrial Science, University of Tokyo
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Mao Ke
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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SARAYA Takuya
Institute Industrial Science, The University of Tokyo
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Saraya Takuya
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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