Mao Ke | Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan

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概要

関連著者

著作論文

Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)

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