Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm
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概要
- 論文の詳細を見る
Mobility degradation in (110)-oriented ultrathin-body double-gate p-type metal–oxide–semiconductor field-effect transistors is experimentally demonstrated for the first time. The physical origin of the mobility degradation can be attributed to the increase in the larger population in the higher-energy subband, leading to a stronger inter-subband scattering.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Toshiro Hiramoto
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Shimizu Ken
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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