Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime

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概要

• 論文の詳細を見る

• A compact and empirical model of subthreshold swing $S$ and body factor $\gamma$ is developed in bulk metal oxide semiconductor field effect transistor (MOSFET) in the short-channel regime. Although the relation between $S$ and $\gamma$ is simply given as $S=60(1+\gamma)$ in the long-channel regime, this relation no longer holds in the short-channel regime due to the short channel effect (SCE). The model is derived using the capacitance network model and by fitting analytical equations to two-dimensional device simulation results. It is confirmed that the model is valid not only at low drain voltage but also at high drain voltage considering the effect of drain-induced barrier lowering. This model is very effective in the design of variable threshold-voltage complementary metal oxide semiconductor (VTCMOS) circuits.

• 2006-08-15

著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Putra Arifin

  Institute Of Industrial Science University Of Tokyo

• Tsutsui Gen

  Institute Of Industrial Science University Of Tokyo

• Saitoh Masumi

  Institute Of Industrial Science University Of Tokyo

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

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