Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations

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概要

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• Mobility in (110)-oriented ultrathin-body (UTB) n-type metal oxide semiconductor field-effect transistor (nMOSFET) with single- and double-gate operations in the silicon-on-insulator (SOI) thickness ($t_{\text{SOI}}$) range of less than 5 nm is experimentally investigated. Monotonic mobility degradation as a decrease in $t_{\text{SOI}}$ is observed with single-gate operation due to quantum confinement. Mobility with double-gate operation is higher than that with single-gate operation in the $t_{\text{SOI}}$ range of less than 5 nm. Moreover, mobility enhancement at $t_{\text{SOI}}$ of 5 nm is observed with double-gate operation. The physical origin of the high mobility with double-gate operation is attributable to volume inversion that decreases surface roughness scattering by relaxed electric field, which is confirmed on the basis of calculations and the temperature dependence of the mobility.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-09-15

著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Tsutsui Gen

  Institute Of Industrial Science University Of Tokyo

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

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