Experimental Study on Mobility Universality in (100) Ultrathin Body nMOSFETs with SOI Thickness of 5 nm
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概要
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In this paper, we describe the experimental determination of the $\eta$ of mobility universality in ultrathin body (UTB) n-type metal–oxide–semiconductor field-effect transistors (nMOSFETs) with silicon-on-insulator (SOI) thickness ranging from 30 down to 5 nm. It is found experimentally for the first time that $\eta$ is larger than 1/2 when SOI thickness is smaller than 12 nm. The meaning of $\eta$ is discussed in terms of the occupancy of the lowest subband of the 2-fold valley.
- 2007-06-25
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Tsutsui Gen
Institute Of Industrial Science University Of Tokyo
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Shimizu Ken
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Tsutsui Gen
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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