Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature
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概要
- 論文の詳細を見る
We propose a new approach for realizing single-electron and single-hole transistors with both large Coulomb blockade oscillations and high voltage gain at room temperature. A thin gate oxide is adopted to increase gate capacitance and ultra-narrow channel is formed to reduce source and drain capacitance. The fabricated single-hole transistor shows large Coulomb blockade oscillations with peak-to-valley-current-ratio of 32 and high voltage gain of as high as 4.7 at room temperature. This is the first demonstration of room-temperature operating single-hole transistor with high voltage gain. The inverter circuit gain is also calculated on the basis of the experimental results, and the gain exceeds unity.
- Japan Society of Applied Physicsの論文
- 2005-05-10
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Saitoh Masumi
Institute Of Industrial Science University Of Tokyo
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Harata Hidehiro
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Harata Hidehiro
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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