NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
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概要
- 論文の詳細を見る
In this paper, negative bias temperature instability (NBTI) reliability of pFETs is analyzed under the post-fabrication SRAM self-improvement scheme that we have developed recently, where cell stability is self-improved by simply applying high stress voltage to supply voltage terminal (VDD) of SRAM cells. It is newly found that there is no significant difference in both threshold voltage and drain current degradation by NBTI stress between fresh PFETs and PFETs after self-improvement scheme application, indicating that the self-improvement scheme has no critical reliability problem.
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Miyano Shinji
Semiconductor Technology Academic Research Center
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KUMAR Anil
Institute Industrial Science, The University of Tokyo
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SARAYA Takuya
Institute Industrial Science, The University of Tokyo
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ALIAS Nurul
Institute Industrial Science, The University of Tokyo
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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