Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor

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概要

• 論文の詳細を見る

• We have observed for the first time the large temperature dependence of Coulomb blockade (CB) oscillation peak current in a room-temperature-operating silicon single-hole transistor (SHT) with high peak-to-valley current ratio (PVCR). The large temperature dependence is not explained by the classical CB theory for single-dot single-electron transistors (SETs). The SHT is fabricated in the form of an ultranarrow-wire-channel metal–oxide–semiconductor field-effect transistor (MOSFET), which acts as a single-dot SHT at room temperature. It is found that, considering the result of numerical calculation, this large temperature dependence is caused by stochastic Coulomb blockade in the SHT, which has multiple-dot behavior at low temperatures. Other possible origins, such as thermally activated current and parasitic MOSFETs, are also discussed.

• 2006-08-15

著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Saitoh Masumi

  Institute Of Industrial Science University Of Tokyo

• Kobayashi Masaharu

  Institute Of Industrial Science University Of Tokyo

• Saitoh Masumi

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

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