Superior $\langle 110\rangle$-Directed Electron Mobility to $\langle 100\rangle$-Directed Electron Mobility in Ultrathin Body (110) n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
The direction dependence of electron mobility in (110) n-type metal–oxide–semiconductor field-effect transistor (MOSFET) with an extremely thin silicon-on-insulator (SOI) has been studied. It is newly found that the electron mobility in the $\langle 110\rangle$ direction surpasses that in the $\langle 100\rangle$ direction with SOI thickness of 3.2 nm, which is opposite to the trend observed in bulk n-type MOSFET. The physical origins of this phenomenon can be attributed to the non-parabolicity in the two-fold valley.
- 2010-05-25
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Shimizu Ken
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Takuya Saraya
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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SARAYA Takuya
Institute Industrial Science, The University of Tokyo
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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