Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors
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概要
- 論文の詳細を見る
The short-channel characteristics of variable-body-factor fully-depleted silicon-on-insulator (FD SOI) metal–oxide–semiconductor field-effect-transistors (MOSFETs), which we previously have proposed, are investigated by two-dimensional device simulation. It is found that, although the advantages of dc characteristics diminish in the short channel regime, improved ac characteristics can be obtained by the reduction in parasitic drain capacitance. The optimization of device parameters for variable-body-factor FD SOI MOSFETs is also discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Ohtou Tetsu
Institute Of Industrial Science The University Of Tokyo
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Nagumo Toshiharu
Institute Of Industrial Science The University Of Tokyo
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Hiramoto Toshiro
Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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