Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
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概要
- 論文の詳細を見る
We have observed very large amplitude (≈90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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SARAYA Takuya
Institute of Industrial Science, University of Tokyo
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IKOMA Toshiaki
Texas Instruments Tsukuba R&D Center
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Ishikuro Hiroki
Institute Of Industrial Science University Of Tokyo
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Ikoma Toshiaki
Texas Instruments Tsukuba Research & Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Hiramoto Toshiro
Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato-ku, Tokyo 106, Japan
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Ishikuro Hiroki
Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato-ku, Tokyo 106, Japan
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SARAYA Takuya
Institute Industrial Science, The University of Tokyo
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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