Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Kumar Anil
Institute Of Industrial Science The University Of Tokyo
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Mizutani Tomoko
Institute Of Industrial Science The University Of Tokyo
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KUMAR Anil
Institute Industrial Science, The University of Tokyo
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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- Untitled - Foreword
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