Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

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概要

• 論文の詳細を見る

• A fully depleted silicon-on-insulator (FD SOI) device having an ultrathin buried oxide (BOX) with a 45-nm fully silicided (FUSI) NiSi gate, and a hybrid SOI/bulk complementary metal oxide semiconductor (CMOS) integration process have been developed. The optimal threshold voltage ($V_{\text{th}}$) for low stand-by power (LSTP) applications in FUSI gate silicon on thin BOX (SOTB) MOSFETs was achieved while keeping a lightly doped channel. By using back-gate bias, we have demonstrated the optimization of device power and performance and a reduction in $V_{\text{th}}$ variation after device fabrication. We have also shown that the characteristics of the integrated hybrid bulk transistor are comparable to those of conventional bulk transistors.

• 2008-04-25

著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Ipposhi Takashi

  Renesas Technology Corp.

• Sugii Nobuyuki

  Central Research Laboratory Hitachi Ltd.

• Tsuchiya Ryuta

  Central Research Laboratory Hitachi Ltd.

• Kimura Shinichiro

  Central Research Laboratory Hitachi Ltd.

• Ishigaki Takashi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Morita Yusuke

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Iwamatsu Toshiaki

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Inoue Yasuo

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Ipposhi Takashi

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Sugii Nobuyuki

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Kimura Shinichiro

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Iwamatsu Toshiaki

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Inoue Yasuo

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

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