Sugii Nobuyuki | Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

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概要

• Sugii Nobuyukiの詳細を見る
• 同名の論文著者
• Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japanの論文著者

関連著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Sugii Nobuyuki

  Central Research Laboratory Hitachi Ltd.

• Tsuchiya Ryuta

  Central Research Laboratory Hitachi Ltd.

• Ishigaki Takashi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Morita Yusuke

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Iwamatsu Toshiaki

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Inoue Yasuo

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Sugii Nobuyuki

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Iwamatsu Toshiaki

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Inoue Yasuo

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

• Ipposhi Takashi

  Renesas Technology Corp.

• Kimura Shinichiro

  Central Research Laboratory Hitachi Ltd.

• Yoshimoto Hiroyuki

  Central Laboratories For Frontier Technology Kirin Holdings Company Limited:(present Office)research

• Oda Hidekazu

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Oda Hidekazu

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Ipposhi Takashi

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Tsuchiya Ryuta

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Yoshimoto Hiroyuki

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Kimura Shinichiro

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

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著作論文

• Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current
• Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

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