Ipposhi Takashi | Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

スポンサーリンク

概要

• Ipposhi Takashiの詳細を見る
• 同名の論文著者
• Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japanの論文著者

関連著者

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Ipposhi Takashi

  Renesas Technology Corp.

• Sugii Nobuyuki

  Central Research Laboratory Hitachi Ltd.

• Tsuchiya Ryuta

  Central Research Laboratory Hitachi Ltd.

• Kimura Shinichiro

  Central Research Laboratory Hitachi Ltd.

• Ishigaki Takashi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Morita Yusuke

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Iwamatsu Toshiaki

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Inoue Yasuo

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Ipposhi Takashi

  Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Sugii Nobuyuki

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Kimura Shinichiro

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Iwamatsu Toshiaki

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Inoue Yasuo

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

もっと見る 閉じる

著作論文

• Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

スポンサーリンク