Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress

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概要

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• The self-improvement of static random access memory (SRAM) cell stability by post-fabrication high-voltage stress is experimentally demonstrated and its mechanism is analyzed using 4k device-matrix-array (DMA) SRAM test element group (TEG). It is shown that the stability of unbalance cells is automatically improved by merely applying stress voltage to the VDD terminal of SRAM. It is newly found that |VTH| of the OFF-state pFETs in the SRAM cell is selectively lowered which improves the cell stability and contributes to the self-improvement.

著者

• Miyano Shinji

  Semiconductor Technology Academic Research Center

• KUMAR Anil

  Institute of Industrial Science, The University of Tokyo

• KUMAR Anil

  Institute Industrial Science, The University of Tokyo

• SARAYA Takuya

  Institute Industrial Science, The University of Tokyo

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

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