MIYAJI Kousuke | Institute of Industrial Science, University of Tokyo
スポンサーリンク
概要
関連著者
-
Hiramoto Toshiro
Institute Of Industrial Science University Of Tokyo
-
MIYAJI Kousuke
Institute of Industrial Science, University of Tokyo
-
Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
-
Hiramoto T
Univ. Tokyo
-
Hiramoto Toshiro
The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi
-
Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers
-
Hiramoto Toshiro
Inst. Of Industrial Science And Cinqie University Of Tokyo
-
Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo
-
Miyaji Kousuke
Institute Of Industrial Science University Of Tokyo
-
SAITOH Masumi
Institute of Industrial Science, University of Tokyo
-
SAITOH Masumi
Toshiba Corporation
-
NAGUMO Toshiharu
Institute of Industrial Science, University of Tokyo
-
Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
-
SAITOH Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
-
KOBAYASHI Masaharu
Institute of Industrial Science, University of Tokyo
-
Saitoh Masumi
Institute Of Industrial Science University Of Tokyo
-
Kobayashi Masaharu
Institute Of Industrial Science University Of Tokyo
-
Nagumo Toshiharu
Institute Of Industrial Science The University Of Tokyo
-
Nagumo Toshiharu
Institute Of Industrial Science University Of Tokyo
著作論文
- Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
- Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs
- Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
- Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
- Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor