Saitoh Masumi | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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- SAITOH Masumiの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporationの論文著者
関連著者
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Nakabayashi Yukio
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Numata Toshinori
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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SAITOH Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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NAKABAYASHI Yukio
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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UCHIDA Ken
Tokyo Institute of Technology
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Saitoh Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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NUMATA Toshinori
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Hiramoto Toshiro
Institute Of Industrial Science University Of Tokyo
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Hiramoto Toshiro
Institute Of Industrial Science The University Of Tokyo
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Hiramoto T
Univ. Tokyo
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SAITOH Masumi
Toshiba Corporation
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MIYAJI Kousuke
Institute of Industrial Science, University of Tokyo
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Hiramoto Toshiro
The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi
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Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers
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Hiramoto Toshiro
Inst. Of Industrial Science And Cinqie University Of Tokyo
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Hiramoto Toshiro
Vlsi Design And Education Center The University Of Tokyo
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Miyaji Kousuke
Institute Of Industrial Science University Of Tokyo
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Tanaka Chika
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kobayashi Shigeki
Advanced Lsi Technology Laboratory Toshiba Corporation
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Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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HIRAMOTO Toshiro
Institute Industrial Science, The University of Tokyo
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UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
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SAITOH Masumi
Institute of Industrial Science, University of Tokyo
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NAGUMO Toshiharu
Institute of Industrial Science, University of Tokyo
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Saitoh Masumi
Institute Of Industrial Science University Of Tokyo
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KOBAYASHI Shigeki
Advanced LSI Technology Laboratory, Toshiba Corporation
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Nagumo Toshiharu
Institute Of Industrial Science The University Of Tokyo
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Nagumo Toshiharu
Institute Of Industrial Science University Of Tokyo
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ken Uchida
Department of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toshinori Numata
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Nakabayashi Yukio
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Masumi Saitoh
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Numata Toshinori
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toshinori Numata
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Numata Toshinori
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Zaitsu Koichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Zaitsu Koichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tanaka Chika
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Shigeki Kobayashi
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Saitoh Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Ishikawa Takayuki
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
著作論文
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
- Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
- Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs
- Low Gate-Induced Drain Leakage and Its Physical Origins in Si Nanowire Transistors
- Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
- Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
- Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors